Description
Bipolar (BJT) Single Transistor, Darlington, NPN, MultiComp Pro, MJ3001
Features:
- Silicon through-hole, epitaxial-base NPN power transistor in monolithic Darlington configuration and mounted in JEDEC TO-3 metal case
- Suitable for linear applications
- Collector emitter voltage (Vce) of 80V
- Continuous collector current (Ic) of 10A
- Power dissipation of 150W
- Operating junction temperature range from -65 °C to 200 °C
- Collector emitter saturation voltage of 4V at Ic=10A
- DC current gain of 1000 at Ic=5A